BYV32G-200 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 01 — 11 January 2011 5 of 11
NXP Semiconductors
BYV32G-200
Dual ultrafast power diode
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
VF
forward voltage IF
=20A; Tj
=25°C - 1 1.15 V
IF
=8A; Tj
=150°C; see Figure 4
- 0.72 0.85 V
IR
reverse current VR
= 200 V; Tj
=100°C - 0.2 0.6 mA
VR
= 200 V; Tj
=25°C - 6 30 μA
Dynamic characteristics
Qr
recovered charge IF
=2A; VR
=30V; dIF/dt = 20 A/μs;
Tj
=25°C
- 8 12.5 nC
trr
reverse recovery time IF
=1A; VR
=30V; dIF/dt = 100 A/μs;
ramp recovery; Tj
=25°C; see Figure 5
- 2025ns
IF
= 0.5 A; IR
= 1 A; step recovery;
measured at reverse current = 0.25 A;
Tj
= 25 °C; see Figure 6
- 1020ns
VFR
forward recovery voltage IF
=1A; dIF/dt = 10 A/μs; Tj
=25°C;
see Figure 7
--1V
Fig 4. Forward current as a function of forward
voltage
Fig 5. Reverse recovery definitions; ramp recovery
0 1.60.4 0.8
1.2
003aac981
16
8
24
32
0
VF
(V)
IF
(A)
(1) (2)
(3)
003aac562
trr
time
100 %
25 %
IF
dlF
dt
IR
IRM
Qr
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